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| S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mWTamb=25 Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT--23 -- 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Collector-base breakdown voltage voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE1 Test conditions Ic= 100A , IE=0 Ic= 1 mAIB=0 IE= 100AIC=0 VCB= 30V , IE=0 VEB= 5VIC=0 VCE= 1V, IC= 150mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50 mA IC= 500mA, IB= 50 mA IC= 10mA, VCE =1V MIN 30 21 5.0 TYP MAX UNIT V V V Collector-emitter breakdown Emitter-base breakdown current current voltage Collector cut-off Emitter cut-off 1.0 100 120 40 500 1.2 1.0 400 A nA DC current gain(note) HFE2 Collector-emitter saturation voltage Base-emitter saturation Base-emitter voltage voltage VCE(sat) VBE(sat) VBE(on) mV V V CLASSIFICATION OF HFE(1) Rank Range B9C 120-200 B9D 160-300 B9E 280-400 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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